<?xml version="1.0" encoding="utf-8" ?> <rss version="2.0" xmlns:opensearch="http://a9.com/-/spec/opensearch/1.1/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:atom="http://www.w3.org/2005/Atom"> <channel> <title> <![CDATA[University of Eldoret Libraries Search for 'su:&quot;Epitaxy.&quot;']]> </title> <!-- prettier-ignore-start --> <link> http://41.89.164.26/cgi-bin/koha/opac-search.pl?q=ccl=su%3A%22Epitaxy.%22&#38;sort_by=relevance&#38;format=rss </link> <!-- prettier-ignore-end --> <atom:link rel="self" type="application/rss+xml" href="http://41.89.164.26/cgi-bin/koha/opac-search.pl?q=ccl=su%3A%22Epitaxy.%22&#38;sort_by=relevance&#38;format=rss" /> <description> <![CDATA[ Search results for 'su:&quot;Epitaxy.&quot;' at University of Eldoret Libraries]]> </description> <opensearch:totalResults>8</opensearch:totalResults> <opensearch:startIndex>0</opensearch:startIndex> <opensearch:itemsPerPage>50</opensearch:itemsPerPage> <atom:link rel="search" type="application/opensearchdescription+xml" href="http://41.89.164.26/cgi-bin/koha/opac-search.pl?q=ccl=su%3A%22Epitaxy.%22&#38;sort_by=relevance&#38;format=opensearchdescription" /> <opensearch:Query role="request" searchTerms="q%3Dccl%3Dsu%253A%2522Epitaxy.%2522" startPage="" /> <item> <title> Epitaxial silicon technology / </title> <dc:identifier>ISBN:0120771209</dc:identifier> <!-- prettier-ignore-start --> <link>http://41.89.164.26/cgi-bin/koha/opac-detail.pl?biblionumber=3468</link> <!-- prettier-ignore-end --> <description> <![CDATA[ <p> Orlando : Academic Press, 1986 .<br /> viii, 328 p. : , Includes bibliographies and index. 24 cm..<br /> 0120771209 </p> ]]> <![CDATA[ <p> <a href="http://41.89.164.26/cgi-bin/koha/opac-reserve.pl?biblionumber=3468">Place hold on <em>Epitaxial silicon technology /</em></a> </p> ]]> </description> <guid>http://41.89.164.26/cgi-bin/koha/opac-detail.pl?biblionumber=3468</guid> </item> <item> <title> Epitaxial silicon technology / </title> <dc:identifier>ISBN:0120771209</dc:identifier> <!-- prettier-ignore-start --> <link>http://41.89.164.26/cgi-bin/koha/opac-detail.pl?biblionumber=3469</link> <!-- prettier-ignore-end --> <description> <![CDATA[ <p> Orlando : Academic Press, 1986 .<br /> viii, 328 p. : , Includes bibliographies and index. 24 cm..<br /> 0120771209 </p> ]]> <![CDATA[ <p> <a href="http://41.89.164.26/cgi-bin/koha/opac-reserve.pl?biblionumber=3469">Place hold on <em>Epitaxial silicon technology /</em></a> </p> ]]> </description> <guid>http://41.89.164.26/cgi-bin/koha/opac-detail.pl?biblionumber=3469</guid> </item> <item> <title> Heterostructures on silicon : one step further with silicon / </title> <dc:identifier>ISBN:0792301242</dc:identifier> <!-- prettier-ignore-start --> <link>http://41.89.164.26/cgi-bin/koha/opac-detail.pl?biblionumber=3950</link> <!-- prettier-ignore-end --> <description> <![CDATA[ <p> Dordrecht ; | Boston : Kluwer Academic Publishers, 1989 .<br /> xiii, 362 p. : , &quot;Proceedings of the NATO Advanced Research Workshop on Heterostructures on Silicon: One Step Further with Silicon, Cargèse, Corsica, France, May 15-20, 1988&quot;--T.p. verso. | &quot;Published in cooperation with NATO Scientific Affairs Division.&quot; 25 cm..<br /> 0792301242 </p> ]]> <![CDATA[ <p> <a href="http://41.89.164.26/cgi-bin/koha/opac-reserve.pl?biblionumber=3950">Place hold on <em>Heterostructures on silicon :</em></a> </p> ]]> </description> <guid>http://41.89.164.26/cgi-bin/koha/opac-detail.pl?biblionumber=3950</guid> </item> <item> <title> Fractal concepts in surface growth / </title> <dc:identifier>ISBN:0521483085 | 0521483182 (pbk.)</dc:identifier> <!-- prettier-ignore-start --> <link>http://41.89.164.26/cgi-bin/koha/opac-detail.pl?biblionumber=6954</link> <!-- prettier-ignore-end --> <description> <![CDATA[ <p> By Barabási, Albert-László..<br /> New York, NY, USA : Press Syndicate of the University of Cambridge, 1995 .<br /> xx, 366 p. : 26 cm..<br /> 0521483085 | 0521483182 (pbk.) </p> ]]> <![CDATA[ <p> <a href="http://41.89.164.26/cgi-bin/koha/opac-reserve.pl?biblionumber=6954">Place hold on <em>Fractal concepts in surface growth /</em></a> </p> ]]> </description> <guid>http://41.89.164.26/cgi-bin/koha/opac-detail.pl?biblionumber=6954</guid> </item> <item> <title> Semiconductor growth, surfaces, and interfaces / </title> <dc:identifier>ISBN:0412577305</dc:identifier> <!-- prettier-ignore-start --> <link>http://41.89.164.26/cgi-bin/koha/opac-detail.pl?biblionumber=6962</link> <!-- prettier-ignore-end --> <description> <![CDATA[ <p> London ; | New York : Published by Chapman &amp; Hall for the Royal Society, 1994 .<br /> ix, 158 p. : 25 cm..<br /> 0412577305 </p> ]]> <![CDATA[ <p> <a href="http://41.89.164.26/cgi-bin/koha/opac-reserve.pl?biblionumber=6962">Place hold on <em>Semiconductor growth, surfaces, and interfaces /</em></a> </p> ]]> </description> <guid>http://41.89.164.26/cgi-bin/koha/opac-detail.pl?biblionumber=6962</guid> </item> <item> <title> Semiconductor growth, surfaces, and interfaces / </title> <dc:identifier>ISBN:0412577305</dc:identifier> <!-- prettier-ignore-start --> <link>http://41.89.164.26/cgi-bin/koha/opac-detail.pl?biblionumber=6964</link> <!-- prettier-ignore-end --> <description> <![CDATA[ <p> London ; | New York : Published by Chapman &amp; Hall for the Royal Society, 1994 .<br /> ix, 158 p. : 25 cm..<br /> 0412577305 </p> ]]> <![CDATA[ <p> <a href="http://41.89.164.26/cgi-bin/koha/opac-reserve.pl?biblionumber=6964">Place hold on <em>Semiconductor growth, surfaces, and interfaces /</em></a> </p> ]]> </description> <guid>http://41.89.164.26/cgi-bin/koha/opac-detail.pl?biblionumber=6964</guid> </item> <item> <title> Atomic layer epitaxy / </title> <dc:identifier>ISBN:0412020114 (U.S.)</dc:identifier> <!-- prettier-ignore-start --> <link>http://41.89.164.26/cgi-bin/koha/opac-detail.pl?biblionumber=7126</link> <!-- prettier-ignore-end --> <description> <![CDATA[ <p> Glasgow : | New York : Blackie ; | Chapman and Hall, 1990 .<br /> ix, 182 p. : 24 cm..<br /> 0412020114 (U.S.) </p> ]]> <![CDATA[ <p> <a href="http://41.89.164.26/cgi-bin/koha/opac-reserve.pl?biblionumber=7126">Place hold on <em>Atomic layer epitaxy /</em></a> </p> ]]> </description> <guid>http://41.89.164.26/cgi-bin/koha/opac-detail.pl?biblionumber=7126</guid> </item> <item> <title> Materials fundamentals of molecular beam epitaxy / </title> <dc:identifier>ISBN:0127016252 (acidfree paper)</dc:identifier> <!-- prettier-ignore-start --> <link>http://41.89.164.26/cgi-bin/koha/opac-detail.pl?biblionumber=8552</link> <!-- prettier-ignore-end --> <description> <![CDATA[ <p> By Tsao, Jeffrey Y..<br /> Boston : Academic Press, 1993 .<br /> xxi, 301 p. : 23 cm..<br /> 0127016252 (acidfree paper) </p> ]]> <![CDATA[ <p> <a href="http://41.89.164.26/cgi-bin/koha/opac-reserve.pl?biblionumber=8552">Place hold on <em>Materials fundamentals of molecular beam epitaxy /</em></a> </p> ]]> </description> <guid>http://41.89.164.26/cgi-bin/koha/opac-detail.pl?biblionumber=8552</guid> </item> </channel> </rss>
